THE INFLUENCE OF SURFACE-TREATMENT ON FIELD-EMISSION FROM SILICON MICROEMITTERS

被引：8

作者：

MILLER, AJ

JOHNSTON, R

机构：

[1] Hirst Res. Centre, GEC-Marconi Ltd., Wembley

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1991年 / 3卷

关键词：

D O I：

10.1088/0953-8984/3/S/036

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Field emission from micron-scale structures is investigated as part of a research programme on vacuum microelectronics. Chemical cleaning and ion bombardment of silicon cones is described. The influence of these treatments on the field emission energy spectra is discussed and analysed using a model of resonance-enhanced tunnelling through an adsorbate layer. It is concluded that resonant tunnelling is a mechanism of importance for explaining low energy structure in field emission energy spectra.

引用

页码：S231 / S236

页数：6