PHOTONIC MEMORY SWITCH CONSISTING OF MULTIPLE QUANTUM-WELL REFLECTION MODULATOR AND HETEROJUNCTION PHOTOTRANSISTOR

被引：8

作者：

MATSUO, S

AMANO, C

KUROKAWA, T

机构：

[1] NTT Opto-electronics Laboratories, Atsugi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 13期

关键词：

D O I：

10.1063/1.107246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a photonic memory operation of an exciton absorptive reflection switch, consisting of a multiple quantum well modulator, a distributed Bragg reflector (DBR), and a heterojunction phototransistor (HPT). For the memory function, some of the bias light incident on the modulator passes through the DBR to illuminate the HPT. The state of the device is maintained after removing the input light incident on the phototransistor and is reset by removing the bias light incident on the modulator. Waveform reshaping and retiming of the disordered input pulse is also demonstrated.

引用

页码：1547 / 1549

页数：3

共 5 条

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[2] SYMMETRIC SELF-ELECTRO-OPTIC EFFECT DEVICE - OPTICAL SET-RESET LATCH
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[3] MATSUO S, 1991, 49TH DEV RES C IVA 3
[4] MATSUO S, 1991, PHOTON TECHNOL LETT, V3, P330
[5] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES
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