INVESTIGATION OF CDS PASSIVATION LAYERS ON HG1-XCDXTE

被引：2

作者：

KACIULIS, S ^{[1
]}

MATTOGNO, G ^{[1
]}

VITICOLI, S ^{[1
]}

MARINI, ME ^{[1
]}

CESQUI, F ^{[1
]}

ALFUSO, S ^{[1
]}

MERCURI, A ^{[1
]}

机构：

[1] ALENIA,I-00131 ROME,ITALY

来源：

SURFACE AND INTERFACE ANALYSIS | 1994年 / 22卷 / 1-12期

关键词：

D O I：

10.1002/sia.740220144

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

CdS thin films were deposited on sapphire substrates and on the HgxCd1-xTe epitaxial and single crystal samples by using chemical decomposition on thiourea and anodic non-aqueous sulphidation techniques, respectively. The chemical composition and depth profiles of deposited films were investigated by selected area XPS combined with Ar+ ion sputtering. Lateral homogeneity of CdS films was studied by using scanning Auger microscopy. Nearly stoichiometric CdS films were obtained on sapphire and HgxCe1-xTe. The thickness, chemical composition and sputtering rate at 2 keV ion energy were determined from XPS data. In both cases (either deposited on sapphire or on HgxCd1-xTe) the CdS films were found to be very non-homogeneous in thickness.

引用

页码：197 / 201

页数：5

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