ATTENUATION AND VELOCITY OF 56 GHZ LONGITUDINAL PHONONS IN GALLIUM-ARSENIDE FROM 50-K TO 300-K

被引：54

作者：

CHEN, W

MARIS, HJ

WASILEWSKI, ZR

TAMURA, SI

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

[2] HOKKAIDO UNIV,DEPT ENGN SCI,SAPPORO,HOKKAIDO 060,JAPAN

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1994年 / 70卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1080/01418639408240242

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used a novel method to measure the attenuation and velocity of 56 GHz longitudinal phonons in GaAs over the temperature range from 50 to 300 K. The sample was a molecular-beam-epitaxy-grown layer separated from the substrate by a GaAs/AlAs multilayer structure that acted as a resonant reflector for the phonons. We discuss the results in terms of theories of the phonon phonon interaction.

引用

页码：687 / 698

页数：12

共 23 条

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