MICROWAVE PERFORMANCE OF GAN MESFETS

被引：143

作者：

BINARI, SC ^{[1
]}

ROWLAND, LB ^{[1
]}

KRUPPA, W ^{[1
]}

KELNER, G ^{[1
]}

DOVERSPIKE, K ^{[1
]}

GASKILL, DK ^{[1
]}

机构：

[1] SFA INC,LANDOVER,MD 20785

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 15期

关键词：

SOLID-STATE MICROWAVE DEVICES; MESFETS;

D O I：

10.1049/el:19940833

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN MESFETs have been fabricated with a 0.25mum thick channel on a high resistivity GaN layer grown by metal organic vapour phase epitaxy. These devices have a transconductance of 20mS/mm. For a 0.7mum gate length device, the measured f(T) and f(max) were 8 and 17GHz, respectively.

引用

页码：1248 / 1249

页数：2

共 6 条

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[5]

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[6]

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