MOCVD OF INDIUM-PHOSPHIDE AND INDIUM GALLIUM-ARSENIDE USING TRIMETHYLINDIUM-TRIMETHYLAMINE ADDUCTS

被引：24

作者：

BASS, SJ ^{[1
]}

SKOLNICK, MS ^{[1
]}

CHUDZYNSKA, H ^{[1
]}

SMITH, L ^{[1
]}

机构：

[1] UNIV LONDON QUEEN MARY COLL,LONDON E1 4NS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 75卷 / 02期

关键词：

D O I：

10.1016/0022-0248(86)90031-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：221 / 226

页数：6

共 17 条

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[3] HIGH-QUALITY EPITAXIAL INDIUM-PHOSPHIDE AND INDIUM ALLOYS GROWN USING TRIMETHYLINDIUM AND PHOSPHINE IN AN ATMOSPHERIC-PRESSURE REACTOR
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 311 - 318
[4] MODIFIED ENTRAINMENT METHOD FOR MEASURING VAPOR-PRESSURES AND HETEROGENEOUS EQUILIBRIUM-CONSTANTS .1. THEORY, AND VALIDATION OF METHOD USING WATER AND LEAD
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[5] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY GAINAS ON INP
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 89 - 91
[6] COLE JM, 1985, I PHYS C SER, V76, P269
[7] DECREMOUX B, 1981, I PHYS C SER, V56, P115
[8] Duchemin J.-P., 1979, INST PHYS CONF SE, V45, P10
[9] PHOTOLUMINESCENCE OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GALNAS
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 955 - 957
[10] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
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SOLOMONOV, AV
GLINSKII, GF
RAZEGHI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4543 - 4552

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