OPTIMIZATION OF THE CAVITY FOR SILICIDE SCHOTTKY INFRARED DETECTORS

被引：3

作者：

KURIANSKI, JM ^{[1
]}

SHANAHAN, ST ^{[1
]}

THEDEN, U ^{[1
]}

GREEN, MA ^{[1
]}

STORYE, JWV ^{[1
]}

机构：

[1] UNIV NEW S WALES,SCH PHYS,KENSINGTON,NSW 2033,AUSTRALIA

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 02期

关键词：

Optical Devices - Resonators; Cavity - Semiconductor Devices; Schottky Barrier;

D O I：

10.1016/0038-1101(89)90174-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quantum efficiency of metal-silicide Schottky barrier IR detectors is strongly dependent on the design of the optical cavity behind each detector element. A theoretical optimization of the dielectric thickness for such cavities is described, as are experimental results which confirm the accuracy of the optimization procedure.

引用

页码：97 / 101

页数：5

共 11 条

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[10] THE OPTIMIZATION OF THE OPTICAL CAVITY OF INFRARED SCHOTTKY-BARRIER DETECTORS
WU, JC
LUE, JT
[J]. SOLID-STATE ELECTRONICS, 1987, 30 (01) : 97 - 104

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