LOCAL ATOMIC-STRUCTURE AT THERMALLY GROWN SI/SIO2 INTERFACES

[1] Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[2] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009

[3] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

[4] PHOTOREFLECTANCE AND ELECTROREFLECTANCE IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (12) : 879 - &

[5] FITCH JT, 1987, MATER RES SOC S P, V92, P89

[6] FITCH JT, 1989, IN PRESS J VACUUM B

[7] FITCH JT, 1988, IN PRESS AIP C P, V167

[8] FITCH JT, 1988, MRS S P, V105, P151

[9] BAND LIMITS AND THE VIBRATIONAL-SPECTRA OF TETRAHEDRAL GLASSES [J]. PHYSICAL REVIEW B, 1979, 19 (08): : 4292 - 4297

[10] THEORY FOR 1ST-ORDER VIBRATIONAL-SPECTRA OF DISORDERED SOLIDS [J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1928 - 1933

[1] Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[2] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009

[3] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

[4] PHOTOREFLECTANCE AND ELECTROREFLECTANCE IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (12) : 879 - &

[5] FITCH JT, 1987, MATER RES SOC S P, V92, P89

[6] FITCH JT, 1989, IN PRESS J VACUUM B

[7] FITCH JT, 1988, IN PRESS AIP C P, V167

[8] FITCH JT, 1988, MRS S P, V105, P151

[9] BAND LIMITS AND THE VIBRATIONAL-SPECTRA OF TETRAHEDRAL GLASSES [J]. PHYSICAL REVIEW B, 1979, 19 (08): : 4292 - 4297

[10] THEORY FOR 1ST-ORDER VIBRATIONAL-SPECTRA OF DISORDERED SOLIDS [J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1928 - 1933