INDIUM TIN OXIDE-FILMS BY SEQUENTIAL EVAPORATION

被引：32

作者：

YAO, JL ^{[1
]}

HAO, S ^{[1
]}

WILKINSON, JS ^{[1
]}

机构：

[1] DALIAN UNIV TECHNOL,DEPT PHYS,OPT FIBRE GRP,DALIAN,PEOPLES R CHINA

来源：

THIN SOLID FILMS | 1990年 / 189卷 / 02期

关键词：

D O I：

10.1016/0040-6090(90)90451-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, a method for preparing thin (16 nm) indium tin oxide (ITO) films for opto-electronic applications using sequential reactive evaporation followed by annealing is described. This method has the advantage of accurate composition control and low cost. An electrical resistivity of 4.0 × 10-5 Ω m and optical transparency greater than 90% have been obtained. The optical attenuation caused by the films deposited on top of ion-exchanged optical waveguides has been measured. This method has also been used for preparing thicker ITO films. © 1990.

引用

页码：227 / 233

页数：7

共 9 条

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