OXYGEN DIFFUSION IN ION-IMPLANTED LAYER OF NB-DOPED SRTIO3

被引：15

作者：

SAKAGUCHI, I

HANEDA, H

HISHITA, S

WATANABE, A

TANAKA, J

机构：

[1] National Institute for Research in Inorganic Materials, Tsukuba, Ibaraki, 305

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 94卷 / 04期

关键词：

D O I：

10.1016/0168-583X(94)95416-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Oxygen diffusion phenomena were investigated on Nb-doped SrTiO3 crystals after Ar or F ion implantation. SIMS measurements indicated that oxygen diffusion profiles consisted of high and low diffusivity regions; the profiles were analyzed by a two-layer model and diffusion coefficients were evaluated. According to TEM observation, there existed three layers in the implanted region whose boundaries were in good agreement with the positions analyzed. A large number of dislocations were produced by the ion implantation, which disappeared upon thermal annealing. The distribution of oxygen vacancies was determined from the diffusion coefficients, and compared with the results of TRIM simulations.

引用

页码：411 / 416

页数：6

共 13 条

[1] DIFFUSION OF NI IN THE BULK AND ALONG DISLOCATIONS IN NIO SINGLE-CRYSTALS [J].