VARIATION OF THE OXYGEN CONTENT IN YBa2Cu3O7-x FILMS DEPOSITED BY HIGH OXYGEN PRESSURE DC-SPUTTERING

被引：9

作者：

Faley, M. I. ^{[1
]}

Poppe, U. ^{[1
]}

Soltner, H. ^{[1
]}

Daehne, U. ^{[1
]}

Klein, N. ^{[1
]}

Schulz, H. ^{[1
]}

Evers, W. ^{[1
]}

Urban, K. ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-W5170 Julich, Germany

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the effect of the variation of the oxygen deficiency on T-c and the normal-state resistivity rho(T) of high quality (001) and (110) or (103) oriented epitaxial YBa2Cu3O7-x films deposited by the method of high oxygen pressure DC-sputtering. The oxygenation in a microwave oxygen plasma can increase Tc up to 95 K and completely restores the film properties suppressed by deoxygenation in molecular oxygen at the same pressure-temperature conditions. The second derivative of the normal-state resistivity d(2)p/dT(2) has a higher value for the nearly fully oxygenated films with better microstructure. A linear dependence p(T> 150K) was received for an oxygen deficiency "x" of about 0.1 or for nearly fully oxygenated films with a less perfect microstructure.

引用

页码：1082 / 1087

页数：6

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