THE PHENOMENON OF ELECTRON ROLLOUT FOR ENERGY DEPOSITION AND DEFECT GENERATION IN IRRADIATED MOS DEVICES

被引：19

作者：

BROWN, DB

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334585

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1240 / 1244

页数：5

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