AC ADMITTANCE OF DOUBLE-INJECTION SPACE-CHARGE-LIMITED DIODES

被引：5

作者：

VANDERZIEL, A

机构：

[1] Department of Electrical Engineering, University of Minnesota Minneapolis

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 13期

关键词：

D O I：

10.1049/el:19690228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that the high-frequency admittance for a doubleinjection space-charge-Umited diode can be written in a very simple form both for the ohmic-relaxation régime and for the dielectric-relaxation régime. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：298 / +

页数：1