ELECTRON-EXCITON INELASTIC-COLLISION CROSS-SECTIONS FOR DIFFERENT SEMICONDUCTORS

被引:23
作者
ELKOMOSS, SG
MUNSCHY, G
机构
[1] Laboratoire de Spectroscopie et d'Optique du Corps Solide, Research Group associated to the CNRS France. Institut de Physique, Strasbourg
关键词
D O I
10.1016/0022-3697(79)90058-1
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electron-exciton inelastic collision cross sections for the different semiconductors CdS, ZnO, CdSe, Si, Cu2O, CuCl, CuBr and CuI have been calculated in the Glauber approximation. The transitions 1s-2s, 1s-3s, 1s-2p and 1s-3p have been considered. The calculations are carried out as function of the different available values of σ = m*e m*h where m*e and m*h are, respectively, the electron a corresponding semiconductors. © 1979.
引用
收藏
页码:431 / 438
页数:8
相关论文
共 35 条