BISTABILITY OF DONOR-HYDROGEN COMPLEXES IN SILICON - A MECHANISM FOR DEBONDING

被引：20

作者：

ESTREICHER, SK ^{[1
]}

SEAGER, CH ^{[1
]}

ANDERSON, RA ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期

关键词：

D O I：

10.1063/1.106196

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The {D,H}+ complex in silicon, with D = P or As, is studied near the ab initio Hartree-Fock level. The results show that the transitions between {D,H}0 and {D,H}+ involve a drastic change in the equilibrium geometry and electronic structure of the complex. The implications of these results on the observed dependence of the debonding rates on majority- and minority-carrier concentrations for both As and P donors are discussed.

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页码：1773 / 1775

页数：3

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