I/V CHARACTERISTICS OF EPITAXIAL SCHOTTKY AU BARRIER DIODE ON P(+) DIAMOND SUBSTRATE

被引：34

作者：

VESCAN, A ^{[1
]}

EBERT, W ^{[1
]}

BORST, T ^{[1
]}

KOHN, E ^{[1
]}

机构：

[1] UNIV ULM,DEPT SOLID STATE PHYS,D-89069 ULM,GERMANY

来源：

关键词：

DIAMOND SCHOTTKY DIODE; DEFECT MODEL; PASSIVATION;

D O I：

10.1016/0925-9635(94)05237-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial p-type Schottky barrier diodes on synthetic p(+) substrates were analysed in terms of their reverse I/V characteristics. A new electronic model was developed to describe the excess leakage current generally observed in epitaxial diodes. This current is attributed to homogeneously distributed defects, acting only on a small fraction of the diode surface area, bypassing the Schottky barrier contact. Passivation experiments are reported to reduce their density.

引用

页码：661 / 665

页数：5

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