METAL/INSULATOR/SEMICONDUCTOR TUNNEL-DIODES FORMED BY THE OXIDATION OF POLYCRYSTALLINE DIAMOND FILMS

被引：5

作者：

GONON, P

DENEUVILLE, A

GHEERAERT, E

FONTAINE, F

LENORMAND, F

机构：

[1] Laboratoire d'Etudes des Propriétés Electroniques des Solides (LEPES), Centre National de la Recherche Scientifique (CNRS), 38042 Grenoble Cedex 9

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.357407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline diamond films have been annealed under O-2 at 600 degrees C, or have been dipped in a H2SO4/CrO3 solution. Both treatments result in the formation of a thin electrically insulating layer at the top of the films. Subsequent metallization results in the formation of a metal/insulated diamond tunnel diode with a potential barrier for holes of 0.85 eV, and with a Fermi level localized at about 0.45 eV above the diamond valence band.

引用

页码：3929 / 3931

页数：3

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