TIGHT-BINDING CALCULATION OF PROPERTIES OF F-CENTER AND OF ISOELECTRONIC DEFECTS IN ZNS

被引：18

作者：

PECHEUR, P ^{[1
]}

KAUFFER, E ^{[1
]}

GERL, M ^{[1
]}

机构：

[1] UNIV NANCY 1,CNRS,LAB 155,F-54037 NANCY,FRANCE

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.14.4521

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4521 / 4526

页数：6

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