EXPERIMENTAL EVIDENCE OF TRANSIT-TIME EFFECTS IN SILICON PUNCH-THROUGH DIODES

被引：6

作者：

DASCALU, D

机构：

[1] Department of Electronic & Electrical Engineering, University of Birmingham

[2] Department of Electronics, Polytechnic Institute of Bucharest, Bucharest

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 09期

关键词：

D O I：

10.1049/el:19690149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Small-signal frequency characteristics indicating the effect of hole transit times were measured for ‘punch-through’ p-v-p silicon diodes. The transit time was sufficiently long to allow measurements in a relatively low frequency range (0 - 5---18MHz), thus avoiding parasitic effects. Experimental results for several operating points in the square-law region of the d.c. characteristic agree very well with the theoretical frequency characteristics. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：196 / &

共 4 条

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