HIGH-VOLTAGE TFT FABRICATED IN RECRYSTALLIZED POLYCRYSTALLINE SILICON

被引：27

作者：

UNAGAMI, T ^{[1
]}

KOGURE, O ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, ELECT COMMUN LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 03期

关键词：

D O I：

10.1109/16.2457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：314 / 319

页数：6

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