SEMICONDUCTOR ELECTRODES .23. DETERMINATION OF FLAT-BAND POTENTIALS FROM DIFFERENTIAL STRESS MEASUREMENTS WITH ATTACHED PIEZOELECTRIC DETECTORS

被引:31
作者
HANDLEY, LJ
BARD, AJ
机构
关键词
D O I
10.1149/1.2129667
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:338 / 343
页数:6
相关论文
共 14 条
[1]   ADSORPTION AT RUTILE-SOLUTION INTERFACE .I. THERMODYNAMIC AND EXPERIMENTAL STUDY [J].
BERUBE, YG ;
DEBRUYN, PL .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1968, 27 (02) :305-&
[2]   PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES [J].
BUTLER, MA ;
GINLEY, DS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :228-232
[3]   ELECTROCHEMICAL PROPERTIES OF SEMICONDUCTING TIO2 (RUTILE) SINGLE-CRYSTAL ELECTRODE [J].
DUTOIT, EC ;
CARDON, F ;
GOMES, WP .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1976, 80 (06) :475-481
[4]   SEMICONDUCTOR ELECTRODES .2. ELECTROCHEMISTRY AT N-TYPE TIO2 ELECTRODES IN ACETONITRILE SOLUTIONS [J].
FRANK, SN ;
BARD, AJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1975, 97 (26) :7427-7433
[5]  
Gerischer H., 1970, PHYSICAL CHEMISTRY A, VIXA, P463
[6]  
GOKHSHTEIN AY, 1971, SOV ELECTROCHEM ENGL, V7, P13
[7]   SEMICONDUCTOR ELECTRODES .13. CHARACTERIZATION AND BEHAVIOR OF N-TYPE ZNO, CDS, AND GAP ELECTRODES IN ACETONITRILE SOLUTIONS [J].
KOHL, PA ;
BARD, AJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (23) :7531-7539
[8]   FREQUENCY-DEPENDENCE OF IMPEDANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODES [J].
LAFLERE, WH ;
VANMEIRHAEGHE, RL ;
CARDON, F ;
GOMES, WP .
SURFACE SCIENCE, 1976, 59 (02) :401-412
[9]   PIEZOELECTRIC MEASUREMENT OF ELECTROCAPILLARY CURVES [J].
MALPAS, RE ;
FREDLEIN, RA ;
BARD, AJ .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1979, 98 (02) :339-343
[10]   PIEZOELECTRIC DETECTION OF ELECTRODE SURFACE PROCESSES [J].
MALPAS, RE ;
FREDLEIN, RA ;
BARD, AJ .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1979, 98 (02) :171-180