CHARGE-TRANSFER, DOPING, AND INTERFACE MORPHOLOGIES FOR AL-C-60

被引:39
作者
OWENS, DW [1 ]
ALDAO, CM [1 ]
POIRIER, DM [1 ]
WEAVER, JH [1 ]
机构
[1] UNIV MAR DEL PLATA,INST MAT SCI & TECHNOL,CONICET,JUAN B JUSTO 4302,RA-7600 MAR DEL PLATA,ARGENTINA
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 23期
关键词
D O I
10.1103/PhysRevB.51.17068
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic properties and morphologies of aluminum-C60 interfaces have been studied with photoelectron spectroscopy. The formation of an interface dipole between the first layer of C60 and Al establishes the Fermi level as the common energy-level reference. This dipole layer reflects the transfer of ∼0.2 electrons per first-layer fullerene. Deposition of Al onto C60 at 300 K results in the formation of Al clusters on the surface and also limited Al diffusion into the fullerene lattice. These interstitial Al atoms create a solid solution and form donor levels that are thermally ionized. Aluminum overlayer growth at 60 K results in smaller islands and suppressed doping because both surface and bulk diffusion are thermally activated processes. There is no evidence of bulk Al-C60 compound formation. © 1995 The American Physical Society.
引用
收藏
页码:17068 / 17072
页数:5
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