GENERATION-RECOMBINATION NOISE IN SUBMICRON SEMICONDUCTOR LAYERS - INFLUENCE OF THE EDGES

被引：8

作者：

KLEINPENNING, TGM ^{[1
]}

JARRIX, S ^{[1
]}

LECOY, G ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,F-34095 MONTPELLIER 5,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.360030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In highly doped thin semiconductor layers one often observes generation-recombination (g-r) noise with a broadened Lorentzian-like spectrum. In a theoretical analysis we have shown that such a spectrum can be ascribed to g-r processes between conduction band and monoenergetic traps in the edge of the layers. (C) 1995 American Institute of Physics.

引用

页码：2883 / 2885

页数：3

共 6 条

[1] FLUCTUATING DEEP-LEVEL TRAP OCCUPANCY MODEL FOR 1/F NOISE IN SEMICONDUCTOR RESISTORS [J].

FOLKES, PA .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) :6279-6288

[2]

JARRIX S, 1994, THESIS U MONTPELLIER

[3] ON 1/F TRAPPING NOISE IN MOSTS [J].

KLEINPENNING, TGM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (09) :2084-2089

[4] 1/F AND G-R NOISE IN ALGAAS EPITAXIAL LAYERS [J].

PASCAL, F ;

DEMURCIA, M ;

LECOY, G ;

VANDAMME, LKJ .

SOLID-STATE ELECTRONICS, 1994, 37 (08) :1503-1508

[5]

PASCAL F, 1993, AIP C P, V285, P296

[6] THEORY OF LOW-FREQUENCY GENERATION NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS [J].

SAH, CT .

PROCEEDINGS OF THE IEEE, 1964, 52 (07) :795-+

← 1 →