EVALUATION OF VALENCE BAND PARAMETERS IN GAAS FROM MAGNETO-OPTICAL DATA

被引：7

作者：

LIPARI, NO

ALTARELLI, M

DINGLE, R

机构：

[1] XEROX WEBSTER RES LAB,WEBSTER,NY 14580

[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[3] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID STATE COMMUNICATIONS | 1975年 / 16卷 / 10-1期

关键词：

D O I：

10.1016/0038-1098(75)90143-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1189 / 1192

页数：4

共 16 条

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[3] PERTURBATION-THEORY INVESTIGATION OF EXCITON GROUND-STATE OF CUBIC SEMICONDUCTORS IN A MAGNETIC-FIELD [J].

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[4] ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].

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[5]

Beer A.C., 1972, SEMICONDUCTORS SEMIM, V9, P151

[6]

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[7]

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CHO K, 1974, 12TH P INT C PHYS SE

[9] ENERGY LEVELS OF INDIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].

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BALDERESCHI, A .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2497-+

[10] THEORY OF EXCITON EFFECTS IN HIGH-FIELD MAGNETOABSORPTION OF REAL SEMICONDUCTORS [J].

LIPARI, NO ;

ALTARELLI, M .

SOLID STATE COMMUNICATIONS, 1973, 13 (11) :1791-1795

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