POSITRON TRAPPING RATE INTO VACANCY CLUSTERS

被引：151

作者：

NIEMINEN, RM ^{[1
]}

LAAKKONEN, J ^{[1
]}

机构：

[1] HELSINKI UNIV TECHNOL,DEPT TECH PHYS,SF-02150 ESPOO 15,FINLAND

来源：

APPLIED PHYSICS | 1979年 / 20卷 / 02期

关键词：

71.60.+z; 78.70.Bj;

D O I：

10.1007/BF00885942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The trapping rate of positrons into vacancy clusters in metals has been calculated. It increases with the trap size and binding energy and approximately scales with the number of vacancies in small clusters. The phonon-mediated contribution to the trapping rate is small. The temperature dependence of the trapping process is discussed. © 1979 Springer-Verlag.

引用

页码：181 / 184

页数：4

共 12 条

[1] POSITRON TRAPPING AT DISLOCATIONS IN METALS [J].

BERGERSEN, B ;

MCMULLEN, T .

SOLID STATE COMMUNICATIONS, 1977, 24 (06) :421-424

[2] POSITRON DIFFUSION IN METALS [J].

BERGERSEN, B ;

PAJANNE, E ;

KUBICA, P ;

STOTT, MJ ;

HODGES, CH .

SOLID STATE COMMUNICATIONS, 1974, 15 (08) :1377-1380

[3] EFFECT OF MICROVOID SIZE ON POSITRON-ANNIHILATION CHARACTERISTICS AND RESIDUAL RESISTIVITY IN METALS [J].

HAUTOJARVI, P ;

HEINIO, J ;

MANNINEN, M ;

NIEMINEN, R .

PHILOSOPHICAL MAGAZINE, 1977, 35 (04) :973-981

[4] POSITRON LIFETIME STUDY OF NEUTRON-IRRADIATED MOLYBDENUM [J].

HINODE, K ;

TANIGAWA, S ;

KUMAKURA, H ;

DOYAMA, M ;

SHIRAISHI, K .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 45 (06) :1858-1866

[5] TRAPPING OF POSITRONS AT VACANCIES IN METALS [J].

HODGES, CH .

PHYSICAL REVIEW LETTERS, 1970, 25 (05) :284-&

[6] ELECTRONS AND POSITRONS IN METAL VACANCIES [J].

MANNINEN, M ;

NIEMINEN, R ;

HAUTOJARVI, P ;

ARPONEN, J .

PHYSICAL REVIEW B, 1975, 12 (10) :4012-4022

[7] EFFECT OF POSITRON-PHONON SCATTERING ON POSITRON TRAPPING AT DEFECTS IN METALS - SOLUTION FOR STRONG TRAPPING [J].

MCMULLEN, T .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1978, 8 (01) :87-101

[8]

MCMULLEN T, 1977, J PHYS F MET PHYS, V7, P3041

[9] TEMPERATURE-DEPENDENCE OF POSITRON TRAPPING AT VOIDS IN METALS [J].

NIEMINEN, RM ;

LAAKKONEN, J ;

HAUTOJARVI, P ;

VEHANEN, A .

PHYSICAL REVIEW B, 1979, 19 (03) :1397-1402

[10] PLASMON MODEL FOR IMAGE-POTENTIAL-INDUCED SURFACE-STATES WITH AN APPLICATION TO POSITRONS AT METAL-SURFACES [J].

NIEMINEN, RM ;

HODGES, CH .

PHYSICAL REVIEW B, 1978, 18 (06) :2568-2576

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