PREPARATION OF ATOMICALLY CLEAN SILICON SURFACES BY PULSED LASER IRRADIATION

被引：89

作者：

ZEHNER, DM

WHITE, CW

OWNBY, GW

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 01期

关键词：

D O I：

10.1063/1.91315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：56 / 59

页数：4

共 14 条

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[2]

BACHMAN KJ, CURRENT TOPICS MATER, V3

[3] ATOMICALLY CLEAN SURFACES BY PULSED LASER BOMBARDMENT [J].

BEDAIR, SM ;

SMITH, HP .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4776-&

[4] FIRST-ORDER APPROXIMATION TO QUANTITATIVE AUGER ANALYSIS IN RANGE 100 TO 1000EV USING CMA ANALYZER [J].

MORABITO, JM .

SURFACE SCIENCE, 1975, 49 (01) :318-324

[5] DEPTH OF MELTING PRODUCED BY PULSED-LASER IRRADIATION [J].

NARAYAN, J .

APPLIED PHYSICS LETTERS, 1979, 34 (05) :312-315

[6] COMPARATIVE-STUDY OF LASER AND THERMAL ANNEALING OF BORON-IMPLANTED SILICON [J].

NARAYAN, J ;

YOUNG, RT ;

WHITE, CW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3912-3917

[7] GENERATION OF CLEAN SURFACES IN HIGH VACUUM [J].

ROBERTS, RW .

BRITISH JOURNAL OF APPLIED PHYSICS, 1963, 14 (09) :537-&

[8] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J].

WANG, JC ;

WOOD, RF ;

PRONKO, PP .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :455-458

[9] REDISTRIBUTION OF DOPANTS IN ION-IMPLANTED SILICON BY PULSED-LASER ANNEALING [J].

WHITE, CW ;

CHRISTIE, WH ;

APPLETON, BR ;

WILSON, SR ;

PRONKO, PP ;

MAGEE, CW .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :662-664

[10] LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J].

WHITE, CW ;

NARAYAN, J ;

YOUNG, RT .

SCIENCE, 1979, 204 (4392) :461-468

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