HIGH-SPEED VLSI INTERCONNECT MODELING BASED ON S-PARAMETER MEASUREMENTS

A first level metal single conductor IC interconnect model is developed for high speed and high density VLSI circuit design. The model shows interconnect circuit parameters vary with frequency. Existing interconnect models exclude effects such as capacitive fringing, and the influence of substrate conductance. This new model represents fine line interconnect as well as wide line interconnect behavior over a 20-GHz frequency range and includes the effects of capacitive fringing and substrate conductance. The model parameters are compared to scattering parameter measurements as well as numerical simulations based on PISCES-II. Excellent agreement is shown with s-parameter measurements.