WET CHEMICAL ETCHING WITH LACTIC-ACID SOLUTIONS FOR INP-BASED SEMICONDUCTOR-DEVICES

被引：6

作者：

IKOSSIANASTASIOU, K

BINARI, SC

KELNER, G

BOOS, JB

KYONO, CS

MITTEREDER, J

GRIFFIN, GL

机构：

[1] LOUISIANA STATE UNIV,DEPT ELECT & COMP ENGN,BATON ROUGE,LA 70808

[2] USN,RES LAB,DIV ELECTR SCI & TECHNOL,WASHINGTON,DC 20375

[3] LOUISIANA STATE UNIV,DEPT CHEM ENGN,BATON ROUGE,LA 70808

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 10期

关键词：

D O I：

10.1149/1.2050022

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report the incorporation of lactic acid etch mixtures in selective and nonselective etches suitable for InP-based III-V compound semiconductor heterostructure devices. Elimination and reduction of surface structures and controllable sidewall profiles are possible with solutions operating in the diffusion-limited, chemical activation-limited transition region.

引用

收藏

页码：3558 / 3564

页数：7

相关论文

共 14 条

[1] CHEMICAL ETCHING CHARACTERISTICS OF (001)INP [J].

ADACHI, S ;

KAWAGUCHI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1342-1349

[2] COLLECTOR-UP LIGHT-EMITTING CHARGE INJECTION TRANSISTORS IN N-INGAAS/INALAS/P-INGAAS AND N-INGAAS/INP/P-INGAAS HETEROSTRUCTURES [J].

BELENKY, GL ;

GARBINSKI, PA ;

LURYI, S ;

MASTRAPASQUA, M ;

CHO, AY ;

HAMM, RA ;

HAYES, TR ;

LASKOWSKI, EJ ;

SIVCO, DL ;

SMITH, PR .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8618-8627

[3] LOCAL ETCH-RATE CONTROL OF MASKED INP/INGAASP BY DIFFUSION-LIMITED ETCHING [J].

BRENNER, T ;

MELCHIOR, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (07) :1954-1956

[4] ETCH RATES AND SELECTIVITIES OF CITRIC ACID/HYDROGEN PEROXIDE ON GAAS, AL0.3GA0.7AS, IN0.2GA0.8AS, IN0.53GA0.47AS, IN0.52AL0.48AS, AND INP [J].

DESALVO, GC ;

TSENG, WF ;

COMAS, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (03) :831-835

[5]

FAUST JW, 1962, COMPOUND SEMICONDUCT, V1, P445

[6] WET CHEMICAL ETCHING BEHAVIOR OF GA(AL)AS AND IN(GA)P(AS) LAYERS [J].

FRANZ, G ;

HOYLER, C ;

SACHER, D .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (11A) :2693-2699

[7] SELECTIVE CHEMICAL ETCHING OF INP OVER INALAS [J].

HE, Y ;

LIANG, BW ;

TIEN, NC ;

TU, CW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (07) :2046-2048

[8] CONTROLLED UNDERCUTTING OF V-GROOVE CHANNELS FOR INP BY PHOTORESIST ETCH MASK [J].

HUO, DTC ;

WYNN, JD ;

NAPHOLTZ, SG ;

WILT, DP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (05) :1231-1234

[9]

KERN W, 1978, THIN FILM PROCESSES, P401

[10] WET CHEMICAL ETCHING OF ALIGNMENT V-GROOVES IN (100) INP THROUGH TITANIUM OR IN0.53GA0.47AS MASKS [J].

KLOCKENBRINK, R ;

PEINER, E ;

WEHMANN, HH ;

SCHLACHETZKI, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (06) :1594-1599