Electric field induced interband second harmonic generation in GaAs/AlGaAs quantum wells

被引：26

作者：

Fiore, A

Rosencher, E

Berger, V

Nagle, J

机构：

[1] Laboratoire Central de Recherches, Thomson CSF, 91404 Orsay, Domaine de Corbeville

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 25期

关键词：

D O I：

10.1063/1.115376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the second order optical susceptibility chi((2)) of symmetric GaAs/AlGaAs quantum wells under applied bias, in the frequency region near half the band gap. The second harmonic is generated in a transmission geometry, and is separated from bulk contribution by a lock-in detection technique. As opposed to previous reports, we find that chi(xzx)((2)) is much higher than chi(zxx)((2)). For 50 Angstrom quantum wells, chi(xzx)((2))approximate to 25 pm/V and chi(zxx)((2))approximate to 0 at lambda = 1.66 mu m under an applied electric field E=50 kV/cm. (C) 1995 American Institute of Physics.

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页码：3765 / 3767

页数：3

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