STEADY-STATE PHOTOCARRIER GRATING TECHNIQUE FOR DIFFUSION-LENGTH MEASUREMENT IN SEMICONDUCTORS - THEORY AND EXPERIMENTAL RESULTS FOR AMORPHOUS-SILICON AND SEMIINSULATING GAAS

被引：131

作者：

RITTER, D ^{[1
]}

WEISER, K ^{[1
]}

ZELDOV, E ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,IL-32000 HAIFA,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 11期

关键词：

D O I：

10.1063/1.339051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4563 / 4570

页数：8

共 17 条

[1]

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[2]

CRANDALL RS, 1984, SEMICONDUCTORS SEM C, V21

[3]

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[4]

EPSTEIN KA, 1987, APPL PHYS LETT, V49, P173

[5] RELATIONSHIP BETWEEN COLLECTION LENGTH AND DIFFUSION LENGTH IN AMORPHOUS-SILICON [J].

FAUGHNAN, B ;

MOORE, A ;

CRANDALL, R .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :613-615

[6] INTENSITY DEPENDENCE OF THE MINORITY-CARRIER DIFFUSION LENGTH IN AMORPHOUS-SILICON BASED ALLOYS [J].

HACK, M ;

SHUR, M .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2967-2971

[7] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J].

HAYNES, JR ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1951, 81 (05) :835-843

[8] THEORY AND EXPERIMENT ON THE SURFACE-PHOTOVOLTAGE DIFFUSION-LENGTH MEASUREMENT AS APPLIED TO AMORPHOUS-SILICON [J].

MOORE, AR .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :222-228

[9] PHOTOELECTROMAGNETIC EFFECT IN AMORPHOUS-SILICON [J].

MOORE, AR .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :327-330

[10]

MOORE AR, 1984, SEMICONDUCTORS SEM C, V21

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