INHOMOGENEOUS BROADENING OF SPECTRAL-LINES IN DOPED INSULATORS

被引：16

作者：

MACFARLANE, RM

机构：

[1] IBM Almaden Research Center, San Jose, CA 95120

来源：

JOURNAL OF LUMINESCENCE | 1990年 / 45卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(90)90089-T

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We briefly review work on the nature of inhomogeneous broadening of spectral lines in doped inorganic insulating crystals, and its effect on dynamical processes. Evidence from fluorescence line-narrowing and spectral holeburning suggests that inhomogeneities act as microscopic perturbations, shifting the energy of near-neighbor dopants by an amount comparable to the overall inhomogeneous broadening. Magnetic inhomogeneities due to different nuclear spin configurations are small (≈kHz-MHz) but very important because they vary on the timescale of a spectral holeburning experiment and lead to spectral diffusion. © 1990.

引用

页码：1 / 5

页数：5

共 29 条

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