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SILICON EPITAXY BY PLASMA DISSOCIATION OF SILANE
被引:8
作者
:
SUZUKI, S
论文数:
0
引用数:
0
h-index:
0
SUZUKI, S
TAKAI, H
论文数:
0
引用数:
0
h-index:
0
TAKAI, H
OKUDA, H
论文数:
0
引用数:
0
h-index:
0
OKUDA, H
ITOH, T
论文数:
0
引用数:
0
h-index:
0
ITOH, T
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1980年
/ 19卷
关键词
:
D O I
:
10.7567/JJAPS.19S1.647
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:647 / 651
页数:5
相关论文
共 4 条
[1]
DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637
[2]
LOW-TEMPERATURE SILICON EPITAXY BY PARTIALLY IONIZED VAPOR-DEPOSITION
ITOH, T
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
ITOH, T
NAKAMURA, T
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
NAKAMURA, T
MUROMACHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
MUROMACHI, M
SUGIYAMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
SUGIYAMA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1977,
16
(04)
: 553
-
557
[3]
JOICE BA, 1963, J ELECTROCHEM SOC, V110, P1235
[4]
SUZUKI S, 1979, 3RD P S ION SOURC AP, P149
←
1
→
共 4 条
[1]
DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637
[2]
LOW-TEMPERATURE SILICON EPITAXY BY PARTIALLY IONIZED VAPOR-DEPOSITION
ITOH, T
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
ITOH, T
NAKAMURA, T
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
NAKAMURA, T
MUROMACHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
MUROMACHI, M
SUGIYAMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
SUGIYAMA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1977,
16
(04)
: 553
-
557
[3]
JOICE BA, 1963, J ELECTROCHEM SOC, V110, P1235
[4]
SUZUKI S, 1979, 3RD P S ION SOURC AP, P149
←
1
→