SILICON EPITAXY BY PLASMA DISSOCIATION OF SILANE

被引:8
作者
SUZUKI, S
TAKAI, H
OKUDA, H
ITOH, T
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D O I
10.7567/JJAPS.19S1.647
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O59 [应用物理学];
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页码:647 / 651
页数:5
相关论文
共 4 条
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  • [2] LOW-TEMPERATURE SILICON EPITAXY BY PARTIALLY IONIZED VAPOR-DEPOSITION
    ITOH, T
    NAKAMURA, T
    MUROMACHI, M
    SUGIYAMA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) : 553 - 557
  • [3] JOICE BA, 1963, J ELECTROCHEM SOC, V110, P1235
  • [4] SUZUKI S, 1979, 3RD P S ION SOURC AP, P149