ETCH PIT CHARACTERIZATION OF CDTE AND CDZNTE SUBSTRATES FOR USE IN MERCURY CADMIUM TELLURIDE EPITAXY

被引：157

作者：

EVERSON, WJ ^{[1
]}

ARD, CK ^{[1
]}

SEPICH, JL ^{[1
]}

DEAN, BE ^{[1
]}

NEUGEBAUER, GT ^{[1
]}

SCHAAKE, HF ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 05期

关键词：

CDTE; CDZNTE; DEFECTS; ETCH PIT; HGCDTE;

D O I：

10.1007/BF02657954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new etch system is described which produces pits on the technologically important B face of (111) and (211) CdTe and CdZnTe which are commonly used in mercury cadmium telluride (MCT) epitaxy. A ratio of approximately 10 wide:1 deep is achieved with this etch allowing its use without removing excessive material, Examples of the use of this etch are given and a comparison is made with the Nakagawa, A face etch system which is in common use to characterize this family of materials. A screening protocol is discussed which integrates the use of etch pitting into the manufacture of substrates for use in epitaxial MCT applications. Comparisons are made between CdZnTe substrates grown using the horizontal and vertical Bridgman techniques.

引用

页码：505 / 510

页数：6

共 10 条

[1] PREFERENTIAL ETCHANT FOR REVEALING CRYSTALLOGRAPHIC DEFECTS ON (111)TE SURFACE OF CDTE CRYSTALS [J].