HOLE RESONANT TUNNELING IN SI/SIGE HETEROSTRUCTURES

[1] BROWN ER, IN PRESS J APPL PHYS

[2] FREQUENCY LIMIT OF DOUBLE BARRIER RESONANT TUNNELING OSCILLATORS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 94 - 96

[3] CHARACTERIZATION OF MBE GROWN SI/GEXSI1-X STRAINED LAYER SUPERLATTICES [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 434 - 439

[4] HOUGHTON DC, 1988, MAR SPIE C ADV SMIC

[5] COMBINING RESONANT TUNNELING DIODES FOR SIGNAL-PROCESSING AND MULTILEVEL LOGIC [J]. APPLIED PHYSICS LETTERS, 1988, 52 (20) : 1684 - 1685

[6] HETEROJUNCTION DOUBLE-BARRIER DIODES FOR LOGIC APPLICATIONS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1246 - 1248

[7] RESONANT TUNNELING IN SI/SI1-XGEX DOUBLE-BARRIER STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (21) : 1809 - 1811

[8] RESONANT TUNNELING OF HOLES IN ALAS-GAAS-ALAS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 415 - 417

[9] MENDEZ EE, IN PRESS NATO ADV B, V179

[10] SELF-CONSISTENT ANALYSIS OF RESONANT TUNNELING CURRENT [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1248 - 1250

[1] BROWN ER, IN PRESS J APPL PHYS

[2] FREQUENCY LIMIT OF DOUBLE BARRIER RESONANT TUNNELING OSCILLATORS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 94 - 96

[3] CHARACTERIZATION OF MBE GROWN SI/GEXSI1-X STRAINED LAYER SUPERLATTICES [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 434 - 439

[4] HOUGHTON DC, 1988, MAR SPIE C ADV SMIC

[5] COMBINING RESONANT TUNNELING DIODES FOR SIGNAL-PROCESSING AND MULTILEVEL LOGIC [J]. APPLIED PHYSICS LETTERS, 1988, 52 (20) : 1684 - 1685

[6] HETEROJUNCTION DOUBLE-BARRIER DIODES FOR LOGIC APPLICATIONS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1246 - 1248

[7] RESONANT TUNNELING IN SI/SI1-XGEX DOUBLE-BARRIER STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (21) : 1809 - 1811

[8] RESONANT TUNNELING OF HOLES IN ALAS-GAAS-ALAS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 415 - 417

[9] MENDEZ EE, IN PRESS NATO ADV B, V179

[10] SELF-CONSISTENT ANALYSIS OF RESONANT TUNNELING CURRENT [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1248 - 1250