PHYSICAL-MECHANISM OF THE REVERSE SHORT-CHANNEL EFFECT IN MOS-TRANSISTORS

被引：7

作者：

HSU, ST ^{[1
]}

KALISH, IH ^{[1
]}

SUZUKI, K ^{[1
]}

KAWABATA, R ^{[1
]}

SHIBAYAMA, H ^{[1
]}

机构：

[1] SHARP CO LTD,INTEGRATED CIRCUIT GRP,TENRI,NARA 632,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 06期

关键词：

D O I：

10.1016/0038-1101(91)90133-J

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold voltage of short-channel-length MOS transistors may increase as the channel length of the device is decreased. This phenomenon is due to the existence of a potential barrier at the edge of the channel to the source/drain junction. This model was demonstrated experimentally with the drain current and the transconductance vs gate-voltage characteristics of short-channel length MOS transistors. It is shown that a potential barrier can strongly degrade the performance of MOS transistors.

引用

页码：605 / 608

页数：4