IV CHARACTERISTICS OF FLOATING-GATE MOS-TRANSISTORS

被引：25

作者：

WANG, ST ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,NEWPORT BEACH,CA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 09期

关键词：

D O I：

10.1109/T-ED.1979.19595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of capacitive coupling on the I-V characteristics of floating-gate MOS transistors are described. A set of modified. I-V equations for these devices is presented and compared with experimental results. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1292 / 1294

页数：3