CYCLOTRON RESONANCE OVER A WIDE TEMPERATURE RANGE .2. SILICON

[1] CYCLOTRON RESONANCE OVER A WIDE TEMPERATURE RANGE .1. GERMANIUM [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1961, 262 (1310) : 340 - +

[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80

[3] BROOKS H, 1955, ADVANCES ELECTRONICS

[4] CYCLOTRON RESONANCE EXPERIMENTS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1956, 104 (03): : 637 - 644

[5] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[6] THERMAL SCATTERING OF ELECTRONS IN SEMICONDUCTORS [J]. PHYSICA, 1954, 20 (11): : 983 - 985

[7] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 79 (06): : 1013 - 1014

[8] VALENCE BAND PARAMETERS IN SILICON FROM CYCLOTRON RESONANCES IN CRYSTALS SUBJECTED TO UNIAXIAL STRESS [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (07) : 307 - 309

[9] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1956, 101 (04): : 1264 - 1268

[10] ON THE ELECTRON-LATTICE INTERACTION IN NON-POLAR SEMICONDUCTORS [J]. PROGRESS OF THEORETICAL PHYSICS, 1957, 18 (01): : 23 - 32

[1] CYCLOTRON RESONANCE OVER A WIDE TEMPERATURE RANGE .1. GERMANIUM [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1961, 262 (1310) : 340 - +

[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80

[3] BROOKS H, 1955, ADVANCES ELECTRONICS

[4] CYCLOTRON RESONANCE EXPERIMENTS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1956, 104 (03): : 637 - 644

[5] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[6] THERMAL SCATTERING OF ELECTRONS IN SEMICONDUCTORS [J]. PHYSICA, 1954, 20 (11): : 983 - 985

[7] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 79 (06): : 1013 - 1014

[8] VALENCE BAND PARAMETERS IN SILICON FROM CYCLOTRON RESONANCES IN CRYSTALS SUBJECTED TO UNIAXIAL STRESS [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (07) : 307 - 309

[9] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1956, 101 (04): : 1264 - 1268

[10] ON THE ELECTRON-LATTICE INTERACTION IN NON-POLAR SEMICONDUCTORS [J]. PROGRESS OF THEORETICAL PHYSICS, 1957, 18 (01): : 23 - 32