PREPARATION OF PURE AND BORON-DOPED EPITAXIAL ALPHA-SIC LAYERS ON SILICON-CARBIDE CRYSTALS

被引：6

作者：

SWIDERSKI, I ^{[1
]}

SZCZUTOWSKI, W ^{[1
]}

NIEMYSKI, T ^{[1
]}

机构：

[1] RES CTR CRYSTALS, DEPT SEMICOND TECHNOL, ZIELNA 37, WARSAW, POLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 21卷 / 01期

关键词：

D O I：

10.1016/0022-0248(74)90160-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：125 / 134

页数：10

共 12 条

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[3] GROWTH CHARACTERISTICS OF ALPHA-SILICON CARBIDE .1. CHEMICAL VAPOR DEPOSITION [J].

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WITT, AF .

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[4] IDENTIFICATION OF (0001) AND (0001) SURFACES OF SILICON CARBIDE [J].

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[5] ETCHING CHARACTERISTICS OF SILICON CARBIDE IN HYDROGEN [J].

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WITT, AF .

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[6] GROWTH CHARACTERISTICS OF ALPHA-SILICON CARBIDE .2. EQUILIBRIUM CONSIDERATIONS [J].

HARRIS, JM ;

GATOS, HC ;

WITT, AF .

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[7] GROWTH, TEXTURE, AND SURFACE MORPHOLOGY OF SIC LAYERS [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :1001-&

[8] EPITAXIAL GROWTH OF SILICON CARBIDE [J].

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[9]

NICKL JJ, 1969, J LESS-COMMON MET, V25, P380

[10]

Swiderski I., 1969, Journal of Crystal Growth, V5, P59, DOI 10.1016/0022-0248(69)90076-1

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