HYDROGEN PRECIPITATION IN HIGHLY OVERSATURATED SINGLE-CRYSTALLINE SILICON

被引：29

作者：

CEROFOLINI, GF

BALBONI, R

BISERO, D

CORNI, F

FRABBONI, S

OTTAVIANI, G

TONINI, R

BRUSA, RS

ZECCA, A

CESCHINI, M

GIEBEL, G

PAVESI, L

机构：

[1] UNIV MODENA, DIPARTIMENTO FIS, I-41100 MODENA, ITALY

[2] UNIV TRENT, DIPARTIMENTO FIS, I-38050 TRENT, ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1995年 / 150卷 / 02期

关键词：

D O I：

10.1002/pssa.2211500202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：539 / 586

页数：48

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