CRYSTALLIZATION OF HGTE CRYSTALS FROM THE VAPOR-PHASE

[1] ALEKSEENKO LI, 1973, NEORGAN MATER, V9, P1249

[2] Auleytner J., 1971, Acta Physica Polonica A, VA39, P379

[3] AULEYTNER J, 1967, XRAY METHODS STUDY D, P86

[4] AVEN M, 1967, PHYSICS CHEM 2 6 COM

[5] PARTIAL PRESSURES OF HG(G) AND TE2(G) IN HG-TE SYSTEM FROM OPTICAL DENSITIES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (06) : 989 - &

[6] CROISSANCE EPITAXIQUE DE COMPOSES SEMICONDUCTEURS PAR EVAPORATION-DIFFUSION EN REGIME ISOTHERME [J]. REVUE DE PHYSIQUE APPLIQUEE, 1966, 1 (01): : 11 - &

[7] DZIUBA Z, 1964, ACTA PHYS POL, V26, P897

[8] DZIUBA Z, 1971, J CRYSTAL GROWTH, V8, P221

[9] Galazka R. R., 1972, Electron Technology, V5, P105

[10] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[1] ALEKSEENKO LI, 1973, NEORGAN MATER, V9, P1249

[2] Auleytner J., 1971, Acta Physica Polonica A, VA39, P379

[3] AULEYTNER J, 1967, XRAY METHODS STUDY D, P86

[4] AVEN M, 1967, PHYSICS CHEM 2 6 COM

[5] PARTIAL PRESSURES OF HG(G) AND TE2(G) IN HG-TE SYSTEM FROM OPTICAL DENSITIES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (06) : 989 - &

[6] CROISSANCE EPITAXIQUE DE COMPOSES SEMICONDUCTEURS PAR EVAPORATION-DIFFUSION EN REGIME ISOTHERME [J]. REVUE DE PHYSIQUE APPLIQUEE, 1966, 1 (01): : 11 - &

[7] DZIUBA Z, 1964, ACTA PHYS POL, V26, P897

[8] DZIUBA Z, 1971, J CRYSTAL GROWTH, V8, P221

[9] Galazka R. R., 1972, Electron Technology, V5, P105

[10] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700