ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM

[1] INFRA-RED ABSORPTION IN SILICON [J]. PHYSICAL REVIEW, 1950, 77 (05): : 727 - 728

[2] GOUCHER, 1951, PHYS REV, V81, P637

[3] Loeb L. B., 1939, FUNDAMENTAL PROCESSE

[4] MCAFEE, 1951, PHYS REV, V83, P650

[5] ELECTRON-HOLE PRODUCTION IN GERMANIUM BY ALPHA-PARTICLES [J]. PHYSICAL REVIEW, 1951, 84 (04): : 829 - 832

[6] HOT ELECTRONS IN GERMANIUM AND OHMS LAW [J]. BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04): : 990 - 1034

[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[8] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[9] Electronic conduction in insulating crystals under very high field strength [J]. PHYSICAL REVIEW, 1938, 54 (12): : 1096 - 1102

[10] Zener C., 1934, P ROY SOC A, V145, P523, DOI DOI 10.1098/RSPA.1934.0116

[1] INFRA-RED ABSORPTION IN SILICON [J]. PHYSICAL REVIEW, 1950, 77 (05): : 727 - 728

[2] GOUCHER, 1951, PHYS REV, V81, P637

[3] Loeb L. B., 1939, FUNDAMENTAL PROCESSE

[4] MCAFEE, 1951, PHYS REV, V83, P650

[5] ELECTRON-HOLE PRODUCTION IN GERMANIUM BY ALPHA-PARTICLES [J]. PHYSICAL REVIEW, 1951, 84 (04): : 829 - 832

[6] HOT ELECTRONS IN GERMANIUM AND OHMS LAW [J]. BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04): : 990 - 1034

[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[8] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[9] Electronic conduction in insulating crystals under very high field strength [J]. PHYSICAL REVIEW, 1938, 54 (12): : 1096 - 1102

[10] Zener C., 1934, P ROY SOC A, V145, P523, DOI DOI 10.1098/RSPA.1934.0116