POLYACRYLIC ACID-DOPED POLYANILINE AS P-TYPE SEMICONDUCTOR IN SCHOTTKY-BARRIER ELECTRONIC DEVICE

被引：27

作者：

CHEN, SA

YIH, F

LEE, HT

机构：

[1] Department of Chemical Engineering, National Tsing-Hua University, Hsinchu

来源：

SYNTHETIC METALS | 1993年 / 57卷 / 01期

关键词：

D O I：

10.1016/0379-6779(93)90561-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Large area (about 0.3-1 cm2) Schottky diodes with polyacrylic acid (PAA)-doped polyaniline (PAn) and undoped PAn as p-type semiconductors sandwiched in between aluminum (Al) and indium-tin oxide (ITO) prepared by casting technique exhibit a moderate rectifying behavior and low leakage current. The current rectification ratio of the diode after doping increases by 1-order raising from 30 at +/-1.3 V to 433 at +/-0.8 V; and the passing current density raises from 10(-5) A/cm2 to 10(-2) A/cm2.

引用

页码：4082 / 4086

页数：5

共 13 条

[1] POLYANILINE ACID DOPANT INTERACTION IN THE PRESENCE OF 1-METHYL-2-PYRROLIDONE [J].