DOMAIN-WALL STRUCTURE OF SI(111) (ROOT-3X-ROOT-3) R30-DEGREES-AU

被引：31

作者：

FALTA, J ^{[1
]}

HILLE, A ^{[1
]}

NOVIKOV, D ^{[1
]}

MATERLIK, G ^{[1
]}

SEEHOFER, L ^{[1
]}

FALKENBERG, G ^{[1
]}

JOHNSON, RL ^{[1
]}

机构：

[1] UNIV HAMBURG,INST EXPERIMENTALPHYS 2,D-22761 HAMBURG,GERMANY

来源：

SURFACE SCIENCE | 1995年 / 330卷 / 02期

关键词：

GOLD; METAL SEMICONDUCTOR INTERFACES; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE RELAXATION AND RECONSTRUCTION; SURFACE STRUCTURE; X-RAY SCATTERING; DIFFRACTION; AND REFLECTION;

D O I：

10.1016/0039-6028(95)00526-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A characteristic feature of the Si(111) (square-root3 x square-root3)R30-degrees-Au surface is an intrinsically high density of domain walls. Combining the complementary strengths of scanning tunneling microscopy and X-ray standing waves it was possible to resolve the atomic structure of the domain walls and the Si(111) (square-root3 x square-root3)R30-degree-Au domains. A detailed structural model for the domain walls is presented and compared to the experimental results. The model involves the coexistence of two kinds of Au trimers with different registries and a separation of 0.5 angstrom normal to the (111) planes.

引用

页码：L673 / L677

页数：5

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