DEPLETION LAYER AMPLIFICATION FROM NEGATIVE DIFFERENTIAL MOBILITY ELEMENTS

被引：5

作者：

GRUBIN, HL ^{[1
]}

KAUL, R ^{[1
]}

机构：

[1] UNITED AIRCRAFT RES LABS,E HARTFORD,CT 06108

来源：

关键词：

D O I：

10.1109/T-ED.1973.17706

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：600 / 602

页数：3

共 12 条

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[3] GRUBIN HL, TO BE PUBLISHED
[4] GRUBIN HL, 1972, IEEE T ELECTRON DEV, VED19, P1294
[5] GRUBIN HL, 1973, IEEE T ELECTRON DEV, VED20, P63
[6] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS
GUNN, JB
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &
[7] HOBSON GS, 1972, PRIVATE COMMUNICATIO
[8] KROEMER H, 1968, IEEE DEVICE, VED15, P819
[9] MCCUMBER DE, 1966, IEEE T ELECTRON DEV, VED13, P5
[10] PERLMAN BS, 1970, IEEE MICR T, VMT18, P911