SELECTIVE EMBEDDED GROWTH OF GAAS BY MOVPE

GaAs selective embedded growth shapes using metalorganic vapor phase epitaxy (MOVPE) are discussed from the standpoint of a growth shape simulation. The growth simulation accounting for both source-gas diffusion in the vapor phase and surface migration was performed using the finite element method to solve the diffusion equations numerically. It became clear that the growth shapes could not be explained by considering source gas diffusion alone because of the irregularity of growth shapes. Including the effect of surface migration in the simulation, a simulated growth shape similar to the experimental result was successfully obtained for migration lengths of 0.2 to 0.3-mu-m in the simulation. This demonstrates that simulation assuming both source-gas diffusion and surface migration is an effective method to predict the growth shapes.