EFFECTS OF COMPOSITION PROFILE ON CHARACTERISTICS OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS

被引：7

作者：

NAKASHIMA, H ^{[1
]}

CHINONE, N ^{[1
]}

TAGUCHI, Y ^{[1
]}

NAKADA, O ^{[1
]}

机构：

[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 06期

关键词：

D O I：

10.1063/1.1662634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2688 / 2689

页数：2

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[1] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS
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[2] ITO R, UNPUBLISHED
[3] REPRODUCIBLE LIQUID-PHASE-EPITAXIAL GROWTH OF DOUBLE HETEROSTRUCTURE GAAS-ALXGA1-XAS LASER-DIODES
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[4] PREPARATION OF MULTILAYER LPE HETEROSTRUCTURES WITH CRYSTALLINE SOLID SOLUTIONS OF ALXGA1-XAS - HETEROSTRUCTURE LASERS
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