TRANSVERSE MAGNETORESISTANCE OF HIGHLY DOPED N-TYPE INSB IN STRONG MAGNETIC-FIELDS

被引：2

作者：

WU, CC

CHEN, A

机构：

[1] Department of Applied Mathematics, National Chiao Tung University, Hsinchu

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 05期

关键词：

D O I：

10.1063/1.90780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum effects are being studied in the transverse magnetoresistance of degenerate semiconductors such as highly doped n-type InSb for the case where acoustic phonons are the dominant scattering mechanism. The result shows that the transverse magnetoresistance oscillates with the dc magnetic field owing to the degeneracy of the electron gas. However, the transverse magnetoresistance for nonparabolic bands is enhanced due to the strong magnetic field dependence.

引用

页码：340 / 342

页数：3

共 11 条

[1]

AGAEVA RG, 1974, SOV PHYS SEMICOND+, V7, P1085

[2] EFFECT OF INELASTICITY OF SCATTERING AND NONPARABOLICITY OF BAND ON TRANSVERSE MAGNETORESISTANCE OF DEGENERATE N-INSB TYPE SEMICONDUCTORS IN A QUANTIZING MAGNETIC-FIELD [J].