ELECTRO-OPTICAL EFFECTS IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES

被引：11

作者：

FORTIN, E

HUA, BY

ROTH, AP

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.39.10887

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10887 / 10891

页数：5

共 30 条

[1] QUANTUM-CONFINED STARK-EFFECT IN INGAAS INP QUANTUM-WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

BARJOSEPH, I ;

KLINGSHIRN, C ;

MILLER, DAB ;

CHEMLA, DS ;

KOREN, U ;

MILLER, BI .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :1010-1012

[2] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].

BASTARD, G .

PHYSICAL REVIEW B, 1981, 24 (10) :5693-5697

[3]

BASTARD G, 1986, IEEE J QUANTUM ELECT, V22, P1696

[4]

BRUM JA, 1985, PHYS REV B, V31, P3393

[5] PHOTOABSORPTION DUE TO EXCITONS FOR INGAAS-GAAS SUPERLATTICE QUANTUM WELLS IN THE PRESENCE OF AN APPLIED ELECTRIC-FIELD [J].

COFFEY, D .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4626-4631

[6] ELECTROABSORPTION IN SEMICONDUCTORS - EXCITONIC ABSORPTION EDGE [J].

DOW, JD ;

REDFIELD, D .

PHYSICAL REVIEW B, 1970, 1 (08) :3358-&

[7] EXCITON DIFFUSION IN THIN CU2O FILMS [J].

FORTIN, E ;

TSELEPIS, E .

THIN SOLID FILMS, 1988, 164 :289-293

[8] DERIVATIVE PHOTOCURRENT SPECTRUM OF AN INGAAS/GAAS STRAINED-LAYER SUPERLATTICE [J].

FRITZ, IJ ;

DOYLE, BL ;

DRUMMOND, TJ ;

BIEFELD, RM ;

OSBOURN, GC .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1606-1608

[9] PHOTOVOLTAIC SPECTROSCOPY OF INGAAS/GAAS SUPERLATTICES [J].

HUA, BY ;

FORTIN, E ;

ROTH, AP ;

MASUT, RA .

APPLIED PHYSICS LETTERS, 1988, 53 (12) :1062-1064

[10] OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS [J].

JI, G ;

HUANG, D ;

REDDY, UK ;

HENDERSON, TS ;

HOUDRE, R ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3366-3373

← 1 2 3 →