TOPOGRAPHY SIMULATION IN PHOTOLITHOGRAPHY USING FINITE-ELEMENT ANALYSIS AND A MODIFIED STRING ALGORITHM

被引：4

作者：

ARSHAK, KI

MCDONAGH, D

MATHUR, BP

ARSHAK, A

机构：

[1] Microelectronics and Semiconductor Research Group, Department of Electronic and Computer Engineering, University of Limerick, Limerick

来源：

COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING | 1994年 / 13卷 / 04期

关键词：

D O I：

10.1108/eb051902

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

In this paper, simulation of topography effects in photolithography is examined using the two-dimensional PC based simulator called SLITS (Simulation of Lithography on Topographic Substrates). This program uses FEA software (in-house written) to solve wave propagation in a photoresist layer and a modified String Algorithm for photoresist development. The simulated results illustrates the effect of topography on the latent and relief images.

引用

页码：871 / 878

页数：8

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