SEMICONDUCTING BEHAVIOR AND PRESSURE-DEPENDENCE OF ELECTRICAL-RESISTIVITY IN TIN MONOSELENIDE SINGLE-CRYSTALS GROWN BY A MODIFIED DIRECT VAPOR TRANSPORT TECHNIQUE

被引：8

作者：

AGARWAL, A

CHAKI, SH

PATEL, SG

LAKSHMINARAYANA, D

机构：

[1] SARDAR PATEL UNIV,DEPT PHYS,VALLABH VIDYANAGAR 388120,GUJARAT,INDIA

[2] SARDAR PATEL UNIV,DEPT ELECTR,VALLABH VIDYANAGAR 388120,GUJARAT,INDIA

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1994年 / 5卷 / 05期

关键词：

D O I：

10.1007/BF00921254

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tin monoselenide single crystals were grown successfully by a modified direct vapour transport technique. The crystals were found to be semiconducting in nature. The influence of pressure on the electrical resistivity of the crystals grown was studied and the results explained on the basis of a transition from a predominantly two-dimensional material to a more three-dimensional one.

引用

页码：287 / 290

页数：4

共 16 条

[1]

Bletskan D. I., 1976, Ukrayins'kyi Fizychnyi Zhurnal, V21, P1436

[2] ELECTRONIC BAND-STRUCTURE OF SNSE [J].